RN2107CT ~ RN2109CT

2010-08-20

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2107CT,RN2108CT,RN2109CT

Switching Applications

Inverter Circuit Applications

Interface Circuit Applications

Driver Circuit Applications

• Incorporating a bias resistor into a transistor reduces parts count.

• Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

• Complementary to RN1107CT to RN1109CT

Equivalent Circuit and Bias Resistor Values

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-1J1A

Weight: 0.75 mg (typ.)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−20

V

Collector-emitter voltage

RN2107CT

to

RN2109CT

−20

V

RN2107CT

−6

RN2108CT

−7

Emitter-base voltage

RN2109CT

−15

V

Collector current

−50

mA

Collector power dissipation

50

mW

Junction temperature

150

°C

Storage temperature range

RN2107CT

to

RN2109CT

−55 to 150

°C

CST3

1.BASE

2.EMITTER

3.COLLECOTR

３

１２

0.35±0.02

0.15±0.03

0.5±0.03

0.6±0.05

0.05±0.03

Top View

Type No.

R1 (k

Ω)

R2 (k

Ω)

RN2107CT

10

47

RN2108CT

22

47

RN2109CT

47

22

R1

B

C

E