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IRF100S201 Datasheet(PDF) 2 Page - International Rectifier |
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IRF100S201 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRF100B201/IRF100S201 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 26, 2015 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.1 ––– V/°C Reference to 25°C, ID = 5mA RDS(on) Static Drain-to-Source On-Resistance ––– 3.5 4.2 m VGS = 10V, ID = 115A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS =100 V, VGS = 0V ––– ––– 250 VDS = 80V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Gate Resistance ––– 2.2 ––– Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 86µH, RG = 50, IAS = 115A, VGS =10V. ISD 115A, di/dt 1400A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Limited by TJmax, starting TJ = 25°C, L = 1.0mH, RG = 50, IAS = 45A, VGS =10V. This value determined from sample failure population, starting TJ =25°C, L= 86µH, RG = 50, IAS =115A, VGS =10V. Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy 567 EAS (Thermally limited) Single Pulse Avalanche Energy 1005 IAR Avalanche Current See Fig 15, 15, 23a, 23b A EAR Repetitive Avalanche Energy mJ mJ EAS (tested) Single Pulse Avalanche Energy Tested Value 240 Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case ––– 0.34 RCS Case-to-Sink, Flat Greased Surface 0.50 ––– RJA Junction-to-Ambient ––– 62 °C/W RJA Junction-to-Ambient (PCB Mount) ––– 40 Absolute Maximum Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 192 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 136 IDM Pulsed Drain Current 690 PD @TC = 25°C Maximum Power Dissipation 441 W Linear Derating Factor 2.9 W/°C VGS Gate-to-Source Voltage ± 20 V TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) |
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