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IRF100B201 Datasheet(PDF) 3 Page - International Rectifier |
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IRF100B201 Datasheet(HTML) 3 Page - International Rectifier |
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3 / 12 page  IRF100B201/IRF100S201 3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 26, 2015 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 278 ––– ––– S VDS = 10V, ID = 115A Qg Total Gate Charge ––– 170 255 nC ID = 115A Qgs Gate-to-Source Charge ––– 46 ––– VDS = 50V Qgd Gate-to-Drain Charge ––– 45 ––– VGS = 10V Qsync Total Gate Charge Sync. (Qg– Qgd) ––– 125 ––– td(on) Turn-On Delay Time ––– 17 ––– ns VDD = 65V tr Rise Time ––– 97 ––– ID = 115A td(off) Turn-Off Delay Time ––– 110 ––– RG= 2.7 tf Fall Time ––– 100 ––– VGS = 10V Ciss Input Capacitance ––– 9500 ––– pF VGS = 0V Coss Output Capacitance ––– 660 ––– VDS = 50V Crss Reverse Transfer Capacitance ––– 310 ––– ƒ = 1.0MHz, See Fig.TBD Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 725 ––– VGS = 0V, VDS = 0V to 80V Coss eff.(TR) Output Capacitance (Time Related) ––– 950 ––– VGS = 0V, VDS = 0V to 80V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 192 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 690 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 115A,VGS = 0V trr Reverse Recovery Time ––– 47 ––– ns TJ = 25°C VDD = 85V ––– 55 ––– TJ = 125°C IF = 115A, Qrr Reverse Recovery Charge ––– 90 ––– nC TJ = 25°C di/dt = 100A/µs ––– 123 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 3.5 ––– A TJ = 25°C dv/dt Peak Diode Recovery dv/dt ––– 18 ––– V/ns TJ = 175°C,IS =115A,VDS = 100V D S G |
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