n North America: Tel. (800) 366-2266, Fax (800) 618-8883

n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298

n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020

Specifications subject to change without notice.

Visit www.macom.com for additional data sheets and product information.

V 2.0

Features

• Surface Mount Diode

• No Wirebonds Required

• Rugged Silicon-Glass Construction

• Silicon Nitride Passivation

• Polymer Scratch Protection

• Low Parasitic Capacitance and Inductance

Description

M/A-COM’s MA4SPS302 is a silicon-glass PIN diode

fabricated with M/A-COM’s patented HMIC™ process. This

device features two silicon pedestals embedded in a low loss

glass.

The diode is formed on the top of one pedestal and

connections to the backside of the device are facilitated by

making the pedestal side walls conductive. Selective backside

metalization is applied producing a surface mount device. The

topside is fully encapsulated with silicon nitride and has an

additional polymer layer for scratch protection.

These

protective coatings prevent damage to the junction and the

anode air-bridge during handling and assembly.

Applications

These devices can be used in series and shunt switches for

wireless circuits where smaller area and profile are required.

Low parasitic values of L and C make additional circuit tuning

unnecessary. 2

for smaller current consumption applications.

Case Style

ODS-1247

1, 2

1.

Backside metal: 0.1 micron thk. gold.

2.

Hatched areas indicate bond pads.

INCHES

DIM.

MIN.

MAX.

MIN.

MAX.

A

0.0520

0.0583

1.320

1.480

B

0.0201

0.0264

0.510

0.670

C

0.0040

0.0080

0.102

0.203

D

0.0180

0.0200

0.457

0.508

E

0.0140

0.0160

0.355

0.406

MILLIMETERS

MA4SPS302 SurMount

™

™ Series

Surface Mount Monolithic

PIN Diode Chip

A

B

C

D

E

D

D

Absolute Maximum Ratings

1

Parameter

Absolute Maximum

Reverse Voltage

-70 V

Forward Current

100 mA

Operating Temperature

-65°C to +150°C

Storage Temperature

-65°C to +150°C

Mounting Temperature

+235°C for 10 seconds

1. Exceeding these limits may cause permanent damage.

1

Ω