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LTC3784 Datasheet(PDF) 4 Page - Linear Technology |
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LTC3784 Datasheet(HTML) 4 Page - Linear Technology |
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4 / 38 page  LTC3784 4 3784fb For more information www.linear.com/LTC3784 elecTrical characTerisTics The l denotes the specifications which apply over the specified operating junction temperature range, otherwise specifications are at TA = 25°C, VBIAS = 12V, unless otherwise noted (Note 2). Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LTC3784 is tested under pulsed load conditions such that TJ ≈ TA. The LTC3784E is guaranteed to meet specifications from 0°C to 85°C junction temperature. Specifications over the –40°C to 125°C operating junction temperature range are assured by design, characterization and correlation with statistical process controls. The LTC3784I is guaranteed over the –40°C to 125°C operating junction temperature range, the LTC3784H is guaranteed over the –40°C to 150°C operating temperature range and the LTC3784MP is tested and guaranteed over the full –55°C to 150°C operating junction temperature range. High junction temperatures degrade operating lifetimes; operating lifetime is derated for junction temperatures greater than 125°C. Note that the maximum ambient temperature consistent with these specifications is determined by specific operating conditions in conjunction with board layout, the rated package thermal impedance and other environmental factors. The junction temperature (TJ, in °C) is calculated from the ambient temperature (TA, in °C) and power dissipation (PD, in Watts) according to the formula: TJ = TA + (PD • θJA), where θJA = 43°C/W for the QFN package and θJA = 80°C/W for the SSOP package. Note 3: This IC includes overtemperature protection that is intended to protect the device during momentary overload conditions. The maximum rated junction temperature will be exceeded when this protection is active. Continuous operation above the specified absolute maximum operating junction temperature may impair device reliability or permanently damage the device. Note 4: The LTC3784 is tested in a feedback loop that servos VFB to the output of the error amplifier while maintaining ITH at the midpoint of the current limit range. Note 5: Dynamic supply current is higher due to the gate charge being delivered at the switching frequency. Note 6: Rise and fall times are measured using 10% and 90% levels. Delay times are measured using 50% levels. Note 7: see Minimum On-Time Considerations in the Applications Information section. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS INTVCC Linear Regulator Internal VCC Voltage 6V < VBIAS < 60V, VEXTVCC = 0V 5.2 5.4 5.6 V INTVCC Load Regulation ICC = 0mA to 50mA 0.5 2 % Internal VCC Voltage 6V < VEXTVCC < 13V 5.2 5.4 5.6 V INTVCC Load Regulation ICC = 0mA to 40mA, VEXTVCC = 8.5V 0.5 2 % EXTVCC Switchover Voltage EXTVCC Ramping Positive l 4.5 4.8 5 V EXTVCC Hysteresis 250 mV Oscillator and Phase-Locked Loop Programmable Frequency RFREQ = 25k RFREQ = 60k RFREQ = 100k 335 105 400 760 465 kHz kHz kHz fLOW Lowest Fixed Frequency VFREQ = 0V 320 350 380 kHz Highest Fixed Frequency VFREQ = INTVCC 488 535 585 kHz Synchronizable Frequency PLLIN/MODE = External Clock l 75 850 kHz PGOOD Output PGOOD Voltage Low IPGOOD = 2mA 0.2 0.4 V PGOOD Leakage Current VPGOOD = 5V ±1 µA PGOOD Trip Level VFB with Respect to Set Regulated Voltage VFB Ramping Negative Hysteresis –12 –10 2.5 –8 % % VFB Ramping Positive Hysteresis 8 10 2.5 12 % % PGOOD Delay PGOOD Going High to Low 45 µs OV Protection Threshold VFB Ramping Positive, OVMODE = 0V 1.296 1.32 1.344 V BOOST1 and BOOST2 Charge Pump BOOST Charge Pump Available Output Current VSW1,2 = 12V; VBOOST1,2 – VSW1,2 = 4.5V; FREQ = 0V, Forced Continuous or Pulse-Skipping Mode 55 µA |
Similar Part No. - LTC3784_15 |
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Similar Description - LTC3784_15 |
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