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KF4N65P Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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KF4N65P Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
1 / 7 page 2011. 6. 21 1/7 SEMICONDUCTOR TECHNICAL DATA KF4N65P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR Revision No : 0 General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES ・VDSS=650V, ID=3.6A ・Drain-Source ON Resistance : RDS(ON)(Max)=2.5Ω @VGS=10V ・Qg(typ.)= 12nC MAXIMUM RATING (Tc=25 ℃) * : Drain current limited by maximum junction temperature. CHARACTERISTIC SYMBOL RATING UNIT KF4N65P KF4N65F Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Drain Current @TC=25℃ ID 3.6 3.6* A @TC=100℃ 2.3 2.3* Pulsed (Note1) IDP 8.4 8.4* Single Pulsed Avalanche Energy (Note 2) EAS 103 mJ Repetitive Avalanche Energy (Note 1) EAR 3.1 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Drain Power Dissipation Tc=25 ℃ PD 83.3 37.9 W Derate above 25 ℃ 0.67 0.30 W/ ℃ Maximum Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ~150 ℃ Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 1.5 3.3 ℃/W Thermal Resistance, Junction-to-Ambient RthJA 62.5 62.5 ℃/W G D S PIN CONNECTION DIM MILLIMETERS TO-220AB 1.46 A B C D E F G H J K M N O 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 MAX 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 A F B J G K M L L E I I O C H NN Q D Q P P 1. GATE 2. DRAIN 3. SOURCE 12 3 1. GATE 2. DRAIN 3. SOURCE TO-220IS (1) A A B C C D D E E F G H H 1.47 MAX 1.47 MAX J K L M L N NN O Q R R 12 3 M DIM MILLIMETERS 10.16 0.2 + _ 15.87 0.2 + _ 2.54 0.2 + _ 0.8 0.1 + _ 3.18 0.1 + _ 0.5 0.1 + _ 3.23 0.1 + _ 13.0 0.5 + _ 2.54 0.2 + _ 4.7 0.2 + _ 6.68 0.2 + _ 2.76 0.2 + _ 3.3 0.1 + _ 12.57 0.2 + _ * Single Gauge Lead Frame KF4N65P KF4N65F |
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