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S6204

SiC Schottky Barrier Diode Bare Die

*1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10

ms square, Tj=25°C

*4 PW=8.3ms sinusoidal, Tj=150°C

*5 Duty cycle=10%, limited by Tj

A

°C

°C

Tj

Tstg

175

-55 to +175

Range of storage temperature

lAbsolute maximum ratings (Tj = 25°C)

Surge no repetitive forward current

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Continuous forward current

Value

Repetitive peak forward current

Junction temperature

650

650

8*

1

35*

5

31*

2

118*

3

25*

4

A

Symbol

lConstruction

Silicon carbide epitaxial planer type

Schottky diode

Parameter

V

V

A

A

A

Unit

650V

8A*

1

lFeatures

13nC

1) Shorter recovery time

3) High-speed switching possible

lInner circuit

2) Reduced temperature dependence

(C) Cathode

(A) Anode

(C)

(A)

1/3

2014.05 - Rev.A