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Super Fast Recovery Diode

RF601BM2D

lSerise

lDimensions (Unit : mm)

lLand Size Figure (Unit : mm)

Standard Fast Recovery

lApplication

General rectification

lFeatures

1)

lStructure

2) Low switching loss

3) Low forward voltage

lTaping Dimensions (Unit : mm)

lConstruction

Silicon epitaxial planar type

lAbsolute Maximum Ratings (T

Repetitive peak reverse voltage

V

Reverse voltage

V

Operating junction temperature

°C

Storage temperature

°C

lElectrical Characteristics (T

Symbol

Min.

Typ. Max.

Unit

-

0.87

0.93

V

Reverse current

-

0.05

10

mA

Reverse recovery time

trr

-

14

25

ns

Thermal resistance

-

-

6.0

°C / W

-55 to +150

200

150

Direct voltage

Junction to case

Parameter

Forward voltage

Conditions

60Hz half sin wave,

-

-

60Hz half sin wave , Resistive load

Average rectified foward current

Unit

200

Parameter

Conditions

Duty≦0.5

Cathode common dual type

Forward current surge peak

60

Symbol

Limits

A

A

Non-repetitive at Tj=25°C, per diode

6

1/2Io per diode

1

ROHM : TO-252

JEITA : SC-63

: Manufacture Date

TO-252

1

2.3

1.6

2.3

6.0

1.6

6.8±0.1

8.0±0.1

4.0±0.1

2.0±0.05

φ 1.55±0.1

　　　　　 0

2.7±0.2

φ 3.0±0.1

0.4±0.1

8.0±0.1

TL

f3.00.1

f1.550.1

Cathode

Anode

Anode

1/4

2014.07 - Rev.A