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CQ202-4M-2 Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part # CQ202-4M-2
Description  4.0 AMP TRIAC 200 THRU 800 VOLTS
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Manufacturer  CENTRAL [Central Semiconductor Corp]
Direct Link  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

CQ202-4M-2 Datasheet(HTML) 1 Page - Central Semiconductor Corp

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CQ202-4B-2
CQ202-4D-2
CQ202-4M-2
CQ202-4N-2
4.0 AMP TRIAC
200 THRU 800 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ202-4B-2
series type is an epoxy molded silicon triac designed
for full wave AC control applications featuring gate
triggering in all four (4) quadrants.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
CQ202
CQ202
CQ202
CQ202
SYMBOL
-4B-2
-4D-2
-4M-2
-4N-2
UNITS
Peak Repetitive Off-State Voltage
VDRM
200
400
600
800
V
RMS On-State Current (TC=80°C)
IT(RMS)
4.0
A
Peak Non-Repetitive Surge Current (t=8.3ms) ITSM
40
A
Peak Non-Repetitive Surge Current (t=10ms)
ITSM
35
A
I2t Value for Fusing (t=10ms)
I2t
6.0
A2s
Peak Gate Power (tp=10μs)
PGM
3.0
W
Average Gate Power Dissipation
PG(AV)
0.2
W
Peak Gate Current (tp=10μs)
IGM
1.2
A
Storage Temperature
Tstg
-40 to +150
°C
Junction Temperature
TJ
-40 to +125
°C
Thermal Resistance
ΘJA
60
°C/W
Thermal Resistance
ΘJC
7.5
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM
Rated VDRM, RGK=1.0KΩ
10
μA
IDRM
Rated VDRM, RGK=1.0KΩ, TC=125°C
200
μA
IGT
VD=12V, QUAD I, II, III
6.6
20
mA
IGT
VD=12V, QUAD IV
35
50
mA
IH
RGK=1.0KΩ
5.2
25
mA
VGT
VD=12V, QUAD I, II, III
1.1
1.5
V
VGT
VD=12V, QUAD IV
2.0
2.5
V
VTM
ITM=6.0A, tp=380μs
1.25
1.6
V
dv/dt
VD=VDRM, TC=125°C
5.0
V/μs
TO-202-2 CASE
R2 (23-April 2012)
www.centr a lsemi.com


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