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RFDA0057SQ Datasheet(PDF) 2 Page - RF Micro Devices |
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RFDA0057SQ Datasheet(HTML) 2 Page - RF Micro Devices |
2 / 11 page 2 of 11 RFDA0057 DS140513 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Typical RF Performance at Key Operating Frequencies Absolute Maximum Ratings Parameter Rating Unit Supply Voltage +5.5 VDC DS Supply Current 205 mA Power Dissipation 1100 mW Maximum Input RF Power 24 dBm Operating Temperature (TCASE) -40 to +85 °C Storage Temperature -40 to +150 °C Junction Temperature 165 °C ESD Rating (HBM) 1000 (Class 1C) V Moisture Sensitivity Level MSL 3 MTTF = 1.0E6 hours at 165°C junction temperature Parameter Specification Unit Condition Min. Typ. Max. Overall Temp = 25°C, VCC = VDD = 5V, standard appli- cation circuit Frequency 400 2700 MHz Max Gain 18.5 dB Attenuation = 0dB Gain Control Range 31.5 dB Step Accuracy +/- (0.15+5% attenuation setting) dB Major state error up to 2700MHz P1dB 19 dBm Attenuation = 0dB at 900MHz Output IP3 37 dBm POUT =0dBm/tone, 1MHz spacing at 900MHz Control Interface 12 bit SPI interface Settling Time 250 ns tON, tOFF (10%/90% RF) Noise Figure 7 dB Attenuation = 0dB Channel-to-Channel Isolation 50 dB Input at RFIN1 (or RFIN2), the isolation between two outputs Impedance 50 Input Return Loss -15 dB 900MHz Output Return Loss -15 dB 900MHz Total Supply Voltage 4.75 5.0 5.25 V Supply Current 155 mA From VCC_SPI, VCC_AMP1 and VCC_AMP2 Thermal Resistance 40 °C/W Junction to backside of device Parameter Unit 700MHz 900MHz 1700MHz 2300MHz 2500MHz 2700MHz Max Small Signal Gain dB 18.5 18.5 18 17.5 17.5 17.5 Output P1dB dBm 19191919 18.5 18.5 Output IP3* dBm 38 37 34.5 32.5 32 31.5 Noise Figure dB 5.7 5.7 6.5 7 6.9 7.2 *Note: OIP3 is tested at POUT = 0dBm/Tone and 1MHz spacing |
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