RFCM3050

40-1003MHZ GAAS/GAN

POWER DOUBLER MODULE

trademarks are the properly of their respective owners. ©2009, RF Micro Devices, Inc.

DS130621

7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical

Support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com

1 of 6

RFCM3050

Package: 9 pin, 11.0 mm x 8.5 mm x 1.375mm

Features



Excellent Linearity



Superior Return Loss Performance



Extremely Low Distortion



Optimal Reliability



Low Noise



Unconditionally Stable Under all

Terminations



High Output Capability



24.5dB Min. Gain at 1003MHz



440mA Max. at 24VDC

Applications



40MHz to 1003MHz CATV Amplifier

Systems

Functional Block Diagram

Product Description

The RFCM3050 is a Power Doubler amplifier SMD module. The part employs GaAs MESFET,

GaAs pHemt and GaN Hemt die, has high output capability, and is operated from 40MHz to

1003MHz. It provides excellent linearity and superior return loss performance with low noise

and optimal reliability. DC current of the device can be externally adjusted for optimum

distortion performance vs. power consumption over a wide range of output level.

DC current of the device can be externally adjusted for optimum distortion performance

versus power consumption over a wide range of output level.

Ordering Information

RFCM3050SB

Sample Bag 5 pieces

RFCM3050SQ

Sample Bag 25 pieces

RFCM3050SR

7” Reel with 100 pieces

RFCM3050TR7

7” Reel with 500 pieces

RFCM3050TR13

13” Reel with 1000 pieces

RFCM3050PCBA-410

Fully Assembled Evaluation Board

RFCM3050PCK-410

Fully Assembled Evaluation Board with Sample Pack

Optimum Technology Matching® Applied

GaAs HBT

SiGe BiCMOS

GaAs pHEMT

GaN HEMT

GaAs MESFET

Si BiCMOS

Si CMOS

RF MEMS

InGaP HBT

SiGe HBT

Si BJT

LDMOS