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GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

Functional Block Diagram

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

Ordering Information

BiFET HBT

RFCM2680

INPUT

OUTPUT

Current Setting

V+

RFCM2680

45MHz TO 1003MHz GaAs/GaN

POWER DOUBLER MODULE

The RFCM2680 is a Power Doubler amplifier SMD Module. The part employs GaAs

pHEMT die and GaN HEMT die, has high output capability, and is operated from

45MHz to 1003MHz. It provides excellent linearity and superior return loss perfor-

mance with low noise and optimal reliability.

DC current of the device can be externally adjusted for optimum distortion perfor-

mance versus power consumption over a wide range of output level.

Features



Excellent Linearity



Superior Return Loss

Performance



Extremely Low Distortion



Optimal Reliability



Low Noise



Unconditionally Stable Under all

Terminations



Extremely High Output Capability



22.5dB Min. Gain at 1003MHz



450mA Max. at 24VDC

Applications



45MHz to 1003MHz CATV

Amplifier Systems

DS120518



Package: 9-pin, 9.0mm x 8.0mm x 1.375mm

RFCM2680

45MHz to

1003MHz

GaAs/GaN

Power Dou-

bler MODULE

RFCM2680SB

Sample bag with 5 pieces

RFCM2680SR

7” Reel with 100 pieces

RFCM2680TR7

7” Reel with 500 pieces

RFCM2680TR13

13” Reel with 1000 pieces

RFCM2680PCBA-410 Fully Assembled Evaluation Board