DMP2004WK

Document number: DS30931 Rev. 6 - 2

2 of 5

www.diodes.com

September 2013

© Diodes Incorporated

DMP2004WK

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-20

V

Gate-Source Voltage

±8

V

Drain Current (Note 5)

-400

mA

Pulsed Drain Current

-1.4

A

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

250

mW

Thermal Resistance, Junction to Ambient (Note 5)

500

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

-20





V

Zero Gate Voltage Drain Current





-1.0

µA

Gate-Source Leakage





1.0

µA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

-0.5



-1.0

V

Static Drain-Source On-Resistance



0.7

1.1



1.7

0.9

1.4

2.0

Ω

Forward Transfer Admittance

200





mS

Diode Forward Voltage (Note 6)

-0.5



-1.2

V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance





175

pF

f = 1.0MHz

Output Capacitance





30

pF

Reverse Transfer Capacitance





20

pF

Notes:

5. Device mounted on FR-4 PCB.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.