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DMS3016SSSA Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMS3016SSSA Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMS3016SSSA Document number: DS35073 Rev. 1 - 2 2 of 6 www.diodes.com October 2010 © Diodes Incorporated DMS3016SSSA Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 4) VGS = 4.5V Steady State TA = 25°C TA = 85°C ID 9.8 6.3 A Pulsed Drain Current (Note 5) IDM 90 A Avalanche Current (Note 5) (Note 6) IAR 13 A Repetitive Avalanche Energy (Note 5) (Note 6) L = 0.3mH EAR 25.4 mJ Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 4) PD 1.54 W Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) RθJA 81 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @ TA = 25°C unless otherwise stated Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS - - 1.0 mA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 1.0 - 2.3 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) - 9 13 mΩ VGS = 10V, ID = 9.8A - 11 16 VGS = 4.5V, ID = 9.8A Forward Transfer Admittance |Yfs| - 11 - S VDS = 5V, ID = 9.8A Diode Forward Voltage VSD - 0.35 0.6 V VGS = 0V, IS = 1A Maximum Body-Diode + Schottky Continuous Current IS - - 5 A - DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 1849 - pF VDS =15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 158 - pF Reverse Transfer Capacitance Crss - 123 - pF Gate Resistance Rg 0.53 2.68 4.82 Ω VDS =0V, VGS = 0V, f = 1MHz Total Gate Charge VGS = 4.5V Qg - 18.5 - nC VDS = 15V, VGS = 10V, ID = 9.8A Total Gate Charge VGS = 10V Qg - 43 - nC Gate-Source Charge Qgs - 4.7 - nC Gate-Drain Charge Qgd - 4.0 - nC Turn-On Delay Time tD(on) - 6.62 - ns VGS = 10V, VDS = 10V, RG = 3Ω, RL = 1.2Ω Turn-On Rise Time tr - 8.73 - ns Turn-Off Delay Time tD(off) - 36.41 - ns Turn-Off Fall Time tf - 4.69 - ns Notes: 4. Device mounted on minimum recommended layout. The value in any given application depends on the user’s specific board design. 5. Repetitive rating, pulse width limited by junction temperature. 6. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. |
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