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DMP3098LSS Datasheet(PDF) 2 Page - Diodes Incorporated

Part No. DMP3098LSS
Description  SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Maker  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
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DMP3098LSS Datasheet(HTML) 2 Page - Diodes Incorporated

   
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DMP3098LSS
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BVDSS
-30
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current
IDSS
-1
μA
VDS = -30V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(th)
-1
-2.1
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS (ON)
56
98
65
115
m
Ω
VGS = -10V, ID = -5.3A
VGS = -4.5V, ID = -4.2A
Forward Transconductance
gfs
5.2
S
VDS = -10V, ID = -5.3A
Diode Forward Voltage (Note 5)
VSD
-0.5
-1.2
V
VGS = 0V, IS = -2A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
336
pF
Output Capacitance
Coss
70
pF
Reverse Transfer Capacitance
Crss
49
pF
VDS = -25V, VGS = 0V
f = 1.0MHz
Gate Resistance
RG
4.6
Ω
VDS = 0V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
QG
4.0
nC
VDS = -15V, VGS = -4.5V,
ID = -5.0A
Total Gate Charge
QG
7.8
Gate-Source Charge
QGS
1.0
Gate-Drain Charge
QGD
2.5
nC
VDS = -15V, VGS = -10V,
ID = -5.0A
Turn-On Delay Time
td(on)
6.0
Rise Time
tr
5.0
Turn-Off Delay Time
td(off)
17.6
Fall Time
tf
9.5
ns
VDS = -15V, VGS = -10V,
ID = -1A, RG = 6.0Ω
Notes:
5. Short duration pulse test used to minimize self-heating effect.
Fig. 1 Typical Output Characteristics
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
0
4
8
12
16
20
01
2
3
4
5
V
= -2.5V
GS
V
= -4.5V
GS
V
= -10V
GS
V
= -1.5V
GS
V
= -3.0V
GS
Fig. 2 Typical Transfer Characteristics
-V
, GATE SOURCE VOLTAGE (V)
GS
0
4
8
12
16
20
12
3
4
5
6
V
= -5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
DMP3098LSS
Document number: DS31265 Rev. 4 - 2
2 of 5
www.diodes.com
September 2008
© Diodes Incorporated


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