CTLDM8002A-M621H

SURFACE MOUNT SILICON

P-CHANNEL

ENHANCEMENT-MODE

MOSFET

ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

gFS

VDS=10V, ID=200mA

200

mS

Crss

VDS=25V, VGS=0, f=1.0MHz

7.0

pF

Ciss

VDS=25V, VGS=0, f=1.0MHz

70

pF

Coss

VDS=25V, VGS=0, f=1.0MHz

15

pF

Qg(tot)

VDS=25V, VGS=4.5V, ID=100mA

0.72

nC

Qgs

VDS=25V, VGS=4.5V, ID=100mA

0.25

nC

Qgd

VDS=25V, VGS=4.5V, ID=100mA

0.16

nC

ton, toff

VDD=30V, VGS=10V, ID=200mA,

RG=25, RL=150Ω

20

ns

TLM621H CASE - MECHANICAL OUTLINE

LEAD CODE:

1) Source

2) Drain

3) Drain

4) Drain

5) Drain

6) Gate

PIN CONFIGURATION

For standard mounting refer

to TLM621H Package Details

MARKING CODE: CNC

*Exposed pad P internally connected

to pins 2, 3, 4, and 5.

OPTIONAL MOUNTING PADS

(Dimensions in mm)

www.centr a lsemi.com

R4 (6-February 2015)