2N5114

2N5115

2N5116

SILICON

P-CHANNEL JFETS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N5114, 2N5115,

and 2N5116 are silicon P-Channel JFETs designed for

switching applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Gate-Drain Voltage

VGD

30

V

Gate-Source Voltage

VGS

30

V

Gate Current

IG

50

mA

Power Dissipation

PD

500

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

2N5114

2N5115

2N5116

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

MIN

MAX

UNITS

IGSS

VGS=20V

-

500

-

500

-

500

pA

IGSS

VGS=20V, TA=150°C

-

1.0

-

1.0

-

1.0

μA

IDSS

VDS=18V

30

90

-

-

-

-

mA

IDSS

VDS=15V

-

-

15

60

5.0

25

mA

ID(OFF)

VDS=15V, VGS=12V

-

500

-

-

-

-

pA

ID(OFF)

VDS=15V, VGS=7.0V

-

-

-

500

-

-

pA

ID(OFF)

VDS=15V, VGS=5.0V

-

-

-

-

-

500

pA

ID(OFF)

VDS=15V, VGS=12V, TA=150°C

-

1.0

-

-

-

-

μA

ID(OFF)

VDS=15V, VGS=7.0V, TA=150°C

-

-

-

1.0

-

-

μA

ID(OFF)

VDS=15V, VGS=5.0V, TA=150°C

-

-

-

-

-

1.0

μA

BVGSS

IG=1.0μA

30

-

30

-

30

-

V

VGS(OFF)

VDS=15V, ID=1.0nA

5.0

10

3.0

6.0

1.0

4.0

V

VGS(f)

IG=1.0mA

-

1.0

-

1.0

-

1.0

V

VDS(ON)

ID=15mA

-

1.3

-

-

-

-

V

VDS(ON)

ID=7.0mA

-

-

-

0.8

-

-

V

VDS(ON)

ID=3.0mA

-

-

-

-

-

0.6

V

rDS(ON)

ID=1.0mA, VGS=0

-

75

-

100

-

150

Ω

rds(ON)

VGS=0, ID=0, f=1.0kHz

-

75

-

100

-

150

Ω

Ciss

VDS=15V, VGS=0, f=1.0MHz

-

25

-

25

-

25

pF

Crss

VGS=12V, VDS=0, f=1.0MHz

-

7.0

-

-

-

-

pF

Crss

VGS=7.0V, VDS=0, f=1.0MHz

-

-

-

7.0

-

-

pF

Crss

VGS=5.0V, VDS=0, f=1.0MHz

-

-

-

-

-

7.0

pF

TO-18 CASE

R1 (4-March 2014)

www.centr a lsemi.com