DMP32D9UFZ

Document number: DS36842 Rev. 2 - 2

4 of 6

www.diodes.com

June 2014

© Diodes Incorporated

DMP32D9UFZ

T , AMBIENT TEMPERATURE (°C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

A

0.4

0.5

0.6

0.7

0.8

0.9

1

-50-25

0

25

50

75100

125

150

-I = 1mA

D

-I = 250µA

D

-V , SOURCE-DRAIN VOLTAGE (V)

Figure 8 Diode Forward Voltage vs. Current

SD

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0

0.3

0.6

0.9

1.2

1.5

T= 150 C

A

°

T= 125 C

A

°

T= -55 C

A

°

T= 25 C

A

°

T= 85 C

A

°

-V , DRAIN-SOURCE VOLTAGE (V)

Figure 9 Typical Junction Capacitance

DS

1

10

100

0

4

8

12

1620

2428

f = 1MHz

Q , TOTAL GATE CHARGE (nC)

Figure 10 Gate-Charge Characteristics

g

0

2

4

6

8

10

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

V

= -15V

I = -200mA

DS

D

t1, PULSE DURATION TIMES (sec)

Figure 11 Transient Thermal Resistance

D = 0.7

D = 0.9

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

Single Pulse

R(t) = r(t) * R

R

= 325°C/W

Duty Cycle, D = t1/ t2

θθ

θ

JA

JA

JA

0.001

0.01

0.1

1

0.000001 0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000