DMP22D4UFA

Document number: DS35766 Rev. 2 - 2

2 of 6

www.diodes.com

May 2012

© Diodes Incorporated

DMP22D4UFA

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-20

V

Gate-Source Voltage

±8

V

Steady

State

-330

-260

mA

t<10s

-400

-310

mA

Steady

State

-250

-200

mA

t<10s

-310

-240

mA

Pulsed Drain Current (Note 6)

-800

mA

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

Steady state

400

mW

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

310

°C/W

t<10s

220

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

-20

-

-

V

Zero Gate Voltage Drain Current

-

-

100

nA

-

-

50

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-0.4

-

-1.0

V

Static Drain-Source On-Resistance

-

1.2

1.9

Ω

-

1.5

2.4

-

2.1

3.4

-

2.5

5

-

4.0

-

Forward Transfer Admittance

100

450

-

mS

Diode Forward Voltage

-

-0.6

-1.0

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

-

28.7

-

pF

f = 1.0MHz

Output Capacitance

-

4.2

-

pF

Reverse Transfer Capacitance

-

2.9

-

pF

Gate Resistance

-

0.4

-

Ω

Total Gate Charge

-

0.4

-

nC

Gate-Source Charge

-

0.08

-

nC

Gate-Drain Charge

-

0.06

-

nC

Turn-On Delay Time

-

5.8

-

ns

Turn-On Rise Time

-

5.7

-

ns

Turn-Off Delay Time

-

31.1

-

ns

Turn-Off Fall Time

-

16.4

-

ns

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on minimum recommended pad layout test board, 10

μs pulse duty cycle = 1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.