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NLB-300-E Datasheet(PDF) 2 Page - RF Micro Devices

Part # NLB-300-E
Description  Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

NLB-300-E Datasheet(HTML) 2 Page - RF Micro Devices

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RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421
DS131015
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
2 of 9
NLB-300
Absolute Maximum Ratings
Parameter
Rating
Unit
RF Input Power
+20
dBm
Power Dissipation
300
mW
Device Current
70
mA
Channel Temperature
200
°C
Operating Temperature
-45 to +85
°C
Storage Temperature
-65 to +150
°C
Exceeding any one or a combination of these limits may cause permanent damage
.
Caution! ESD sensitive device.
RoHS (Restriction of Hazardous
Substances): Compliant per EU Directive
2011/65/EU.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Nominal Operating Parameters
Parameter
Specification
Unit
Condition
Min
Typ
Max
General Performance
VD = +3.8V, ICC = 50mA, Z0 = 50Ω, TA = +25°C
Small Signal Power Gain, S21
12.0
13.0
dB
f = 0.1GHz to 1.0GHz
10.7
dB
f = 1.0GHz to 4.0GHz
8.9
dB
f = 4.0GHz to 6.0GHz
8.5
8.9
dB
f = 6.0GHz to 10.0GHz
8.5
dB
f = 10.0GHz to 12.0GHz
Gain Flatness, GF
±0.1
dB
f = 5.0GHz to 10.0GHz
Input VSWR
2.2:1
f = 0.1GHz to 4.0GHz
2.8:1
f = 4.0GHz to 7.0GHz
2.0:1
f = 7.0GHz to 12.0GHz
Output VSWR
2.2:1
f = 0.1GHz to 4.0GHz
2.9:1
f = 4.0GHz to 7.0GHz
2.4:1
f = 7.0GHz to 12.0GHz
Output Power at -1dB
Compression, P1dB
11.1
dBm
f = 2.0GHz
14.1
dBm
f = 6.0GHz
12.7
dBm
f = 10.0GHz
Noise Figure, NF
4.9
dB
f = 3.0GHz
Third Order Intercept, IP3
+28.6
dBm
f = 2.0GHz
+27.0
f = 6.0GHz
Reverse Isolation, S12
-16
dB
f = 0.1GHz to 20.0GHz
Device Voltage, V
D
3.6
3.8
4.2
V
Gain Temperature Coefficient,
/
-0.0015
dB/°C


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