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CMPDM302PH Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CMPDM302PH Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 3 page  CMPDM302PH SURFACE MOUNT SILICON ENHANCEMENT-MODE P-CHANNEL MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM302PH is a high current P-channel enhancement-mode silicon MOSFET, manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. MARKING CODE: 302C MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 12 V Continuous Drain Current (Steady State) ID 2.4 A Maximum Pulsed Drain Current, tp=10μs IDM 9.6 A Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -55 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF, IGSSR VGS=12V, VDS=0 100 nA IDSS VDS=20V, VGS=0 1.0 μA BVDSS VGS=0, ID=250μA 30 V VGS(th) VGS=VDS, ID=250μA 0.7 1.4 V rDS(ON) VGS=4.5V, ID=1.2A 0.050 0.091 Ω rDS(ON) VGS=2.5V, ID=1.2A 0.066 0.129 Ω gFS VDS=5.0V, ID=2.4A 4.6 S Crss VDS=10V, VGS=0, f=1.0MHz 69 pF Ciss VDS=10V, VGS=0, f=1.0MHz 800 pF Coss VDS=10V, VGS=0, f=1.0MHz 62 pF Qg(tot) VDD=10V, VGS=5.0V, ID=2.4A 7.0 9.6 nC Qgs VDD=10V, VGS=5.0V, ID=2.4A 1.4 4.2 nC Qgd VDD=10V, VGS=5.0V, ID=2.4A 1.5 2.6 nC ton VDD=10V, ID=2.4A, RG=10Ω 12 ns toff VDD=10V, ID=2.4A, RG=10Ω 17 ns FEATURES: • Low rDS(ON) (0.129Ω MAX @ VGS=2.5V) • High current (ID=2.4A) • Logic level compatibility APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment SOT-23F CASE R2 (24-February 2014) www.centr a lsemi.com |
Similar Part No. - CMPDM302PH_15 |
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Similar Description - CMPDM302PH_15 |
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