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DMC2004LPK Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMC2004LPK Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 8 page DMC2004LPK Document number: DS30854 Rev. 7 - 2 2 of 8 www.diodes.com February 2013 © Diodes Incorporated DMC2004LPK Maximum Ratings N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Drain Current (Note 5) TA = +25°C TA = +85°C ID 750 540 mA Maximum Ratings P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Drain Current (Note 5) TA = +25°C TA = +85°C ID -600 -430 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 500 mW Thermal Resistance, Junction to Ambient RθJA 250 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Electrical Characteristics N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS 20 — — V VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current IDSS — — 1 µA VDS = 16V, VGS = 0V Gate-Source Leakage IGSS — — ± 1 µA VGS = ±4.5V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) 0.5 — 1.0 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS (ON) — — — 0.4 0.5 0.7 0.55 0.70 0.90 Ω VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA Forward Transfer Admittance |Yfs| 200 — — mS VDS =10V, ID = 0.2A Diode Forward Voltage (Note 6) VSD 0.5 — 1.2 V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss — — 150 pF VDS = 16V, VGS = 0V f = 1.0MHz Output Capacitance Coss — — 25 pF Reverse Transfer Capacitance Crss — — 20 pF Electrical Characteristics P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS -20 — — V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS — — -1.0 µA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS — — ± 1.0 µA VGS = ±4.5V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) -0.5 — -1.0 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS (ON) — 0.7 1.1 1.7 0.9 1.4 2.0 Ω VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA Forward Transfer Admittance |Yfs| 200 — — mS VDS =10V, ID = 0.2A Diode Forward Voltage (Note 5) VSD -0.5 — -1.2 V VGS = 0V, IS = -115mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss — — 175 pF VDS = -16V, VGS = 0V f = 1.0MHz Output Capacitance Coss — — 30 pF Reverse Transfer Capacitance Crss — — 20 pF Notes: 5. Device mounted on FR-4 PCB. 6. Short duration pulse test used to minimize self-heating effect. |
Similar Part No. - DMC2004LPK_15 |
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Similar Description - DMC2004LPK_15 |
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