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CXE-1089ZSQ Datasheet(PDF) 2 Page - RF Micro Devices |
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CXE-1089ZSQ Datasheet(HTML) 2 Page - RF Micro Devices |
2 / 12 page 2 of 12 DS100917 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. CXE-1089Z Parameter Specification Unit Condition Min. Typ. Max. Small Signal Gain 12.9 dB 500MHz Gain Flatness +/-0.4 dB 50MHz to 1000MHz Output Power at 1dB Compression 17.2 dBm 500MHz Output Third Order Intercept Point 37.8 dBm 500MHz CSO -61 dBc 55.25MHz to 547.25MHz, 79Ch, NTSC, Flat Tilt, +15.5dBmV Input CTB -79 dBc 55.25MHz to 547.25MHz, 79Ch, NTSC, Flat Tilt, +15.5dBmV Input Input Return Loss, Worst Case 16.4 dB 50MHz to 1000MHz, -40°C to +85°C Output Return Loss, Worst Case 17.5 dB 50MHz to 1000MHz, -40°C to +85°C Noise Figure 2.9 dB 500MHz Device Operating Voltage 4.75 4.9 VDC Device Operating Current 106 mA Quiescent Test Conditions: VD=+4.75VDC, ID=106mA, Typ. OIP3 Tone Spacing=1MHz, POUT per tone=+8dBm T=+25°C, ZS=ZI=75Ω, Tested with +5VDC Applications Circuit Parameter Specification Unit Condition Min. Typ. Max. Small Signal Gain 12.7 dB 500MHz Gain Flatness +/-0.4 dB 50MHz to 1000MHz Output Power at 1dB Compression 14.2 dBm 500MHz Output Third Order Intercept Point 35.4 dBm 500MHz CSO -56 dBc 55.25MHz to 547.25MHz, 79Ch, NTSC, Flat Tilt, +15.5dBmV Input CTB -78 dBc 55.25MHz to 547.25MHz, 79Ch, NTSC, Flat Tilt, +15.5dBmV Input Input Return Loss, Worst Case 16.4 dB 50MHz to 1000MHz, -40°C to +85°C Output Return Loss, Worst Case 17.5 dB 50MHz to 1000MHz, -40°C to +85°C Noise Figure 2.8 dB 500MHz Device Operating Voltage 3.3 3.5 VDC Device Operating Current 75 mA Quiescent Test Conditions: VD=+3.3VDC, ID=75mA, Typ. OIP3 Tone Spacing=1MHz, POUT per tone=+8dBm T=+25°C, ZS=ZI=75Ω, Tested with +5VDC Applications Circuit Absolute Maximum Ratings Parameter Rating Unit Device Current (ID) 125 mA Device Voltage (VD)5.5 V Power Dissipation 690 mW RF Input Power* (See Note) 23 dBm Junction Temperature (TJ)+150 °C Operating Temperature Range (TL) -40 to +85 °C Storage Temperature Range -65 to +150 °C ESD Rating - Human Body Model (HBM) Class 1A Moisture Sensitivity Level MSL 2 *Note: Load condition, 10:1 VSWR Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IDVD<(TJ-TL)/RTH, j-l TL=TLEAD Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. |
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