D44C1 D44C4

D44C7 D44C10

D44C2 D44C5

D44C8 D44C11

MAXIMUM RATINGS: (TC=25°C)

SYMBOL

D44C3 D44C6

D44C9 D44C12

UNITS

Collector-Emitter Voltage

VCES

40

55

70

90

V

Collector-Emitter Voltage

VCEO

30

45

60

80

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

4.0

A

Peak Collector Current

ICM

6.0

A

Power Dissipation

PD

30

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJC

4.2

°C/W

Thermal Resistance

ΘJA

75

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICES

VCE=Rated VCES

10

μA

IEBO

VEB=5.0V

100

μA

BVCEO

IC=100mA (D44C1, 2, 3)

30

V

BVCEO

IC=100mA (D44C4, 5, 6)

45

V

BVCEO

IC=100mA (D44C7, 8, 9)

60

V

BVCEO

IC=100mA (D44C10, 11, 12)

80

V

VCE(SAT)

IC=1.0A, IB=50mA

(D44C2, 3, 5, 6, 8, 9, 11, 12)

0.5

V

VCE(SAT)

IC=1.0A, IB=100mA (D44C1, 4, 7, 10)

0.5

V

VBE(SAT)

IC=1.0A, IB=100mA

1.3

V

Cob

VCB=10V, IE=0, f=1.0MHz

100

pF

fT

VCE=4.0V, IC=20mA

50

MHz

td+tr

IC=1.0A, IB1=100mA

100

ns

ts

IC=1.0A, IB1=IB2=100mA

500

ns

tf

IC=1.0A, IB1=IB2=100mA

75

ns

D44C SERIES

SILICON

NPN POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR D44C series

devices are silicon NPN power transistors designed for

general purpose amplifier and switching applications.

MARKING: FULL PART NUMBER

TO-220 CASE

R1 (4-March 2014)

www.centr a lsemi.com