DMP2047UCB4

Document number: DS36154 Rev. 6 - 2

2 of 6

www.diodes.com

May 2015

© Diodes Incorporated

DMP2047UCB4

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

-20

V

Gate-Source Voltage

-6

V

Steady

State

-4.1

-3.2

A

Steady

State

-3.6

-2.8

A

Pulsed Drain Current (Note 6)

16

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 7)

1.0

W

127

°C/W

25.8

°C/W

Power Dissipation (Note 5)

1.66

W

77

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

-20

—

—

V

Gate-Source Breakdown Voltage

-6.0

—

—

V

—

—

-1

μA

Gate-Source Leakage

—

—

-100

nA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

-0.4

-0.8

-1.2

V

Static Drain-Source On-Resistance

—

40

47

m

Ω

—

53

60

Forward Transfer Admittance

—

3.7

—

S

Diode Forward Voltage

—

-0.7

-1.0

V

Reverse Recovery Charge

—

3.07

—

nC

di/dt =1

00A/μs

Reverse Recovery Time

—

13.14

—

ns

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

—

218

—

pF

f = 1.0MHz

Output Capacitance

—

116

—

Reverse Transfer Capacitance

—

11

—

Total Gate Charge

—

2.3

—

nC

Gate-Source Charge

—

0.2

—

Gate-Drain Charge

—

0.4

—

Gate Charge at Vth

—

0.2

—

Turn-On Delay Time

—

7.9

—

ns

Turn-On Rise Time

—

10.7

—

Turn-Off Delay Time

—

48

—

Turn-Off Fall Time

—

38

—

Notes:

5. Device mounted on FR4 material with 1-inch

6. Repetitive rating, pulse width limited by junction temperature.

7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.