DMP3028LFDE

Document number: DS35965 Rev. 7 - 2

2 of 6

www.diodes.com

October 2014

© Diodes Incorporated

DMP3028LFDE

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Steady

State

-6.8

-5.3

A

t<10s

-8.2

-6.6

A

Maximum Body Diode Forward Current (Note 6)

-2.5

A

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

-40

A

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

0.66

W

0.42

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

189

°C/W

t<10s

125

Total Power Dissipation (Note 6)

2.03

W

1.3

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

61

°C/W

t<10s

41

Thermal Resistance, Junction to Case (Note 6)

9.3

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

-30





V

Zero Gate Voltage Drain Current





-1

µA

Gate-Source Leakage





100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-1.2



-2.4

V

Static Drain-Source On-Resistance



20

25

m

Ω



29

38

Forward Transfer Admittance



4.5



S

Diode Forward Voltage



0.7

1.2

V

On State Drain Current (Note 8)

-20



—

—

A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance



1241

1860

pF

f = 1.0MHz

Output Capacitance



147

220

Reverse Transfer Capacitance



110

165

Gate Resistance



15

30

Ω



22

33

nC





10.9

17

Gate-Source Charge



3.5

6

Gate-Drain Charge



4.7

8

Turn-On Delay Time



9.7

15

nS

Turn-On Rise Time



17.1

26

Turn-Off Delay Time



60.5

91

Turn-Off Fall Time



40.4

61

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.