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DMP3028LFDE-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP3028LFDE-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMP3028LFDE Document number: DS35965 Rev. 7 - 2 2 of 6 www.diodes.com October 2014 © Diodes Incorporated DMP3028LFDE Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID -6.8 -5.3 A t<10s TA = +25°C TA = +70°C ID -8.2 -6.6 A Maximum Body Diode Forward Current (Note 6) IS -2.5 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM -40 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 0.66 W TA = +70°C 0.42 Thermal Resistance, Junction to Ambient (Note 5) Steady State RJA 189 °C/W t<10s 125 Total Power Dissipation (Note 6) TA = +25°C PD 2.03 W TA = +70°C 1.3 Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 61 °C/W t<10s 41 Thermal Resistance, Junction to Case (Note 6) RJC 9.3 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) -1.2 -2.4 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS (ON) 20 25 m Ω VGS = -10V, ID = -7A 29 38 VGS = -4.5V, ID = -6.2A Forward Transfer Admittance |Yfs| 4.5 S VDS = -5V, ID = -7A Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = -2.1A On State Drain Current (Note 8) ID(ON) -20 — — A VDS ≦-5V, VGS = -4.5V DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 1241 1860 pF VDS = -15V, VGS = 0V f = 1.0MHz Output Capacitance Coss 147 220 Reverse Transfer Capacitance Crss 110 165 Gate Resistance RG 15 30 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 10V) Qg 22 33 nC VDS = -15V, ID = -7A Total Gate Charge (VGS = 4.5V) Qg 10.9 17 Gate-Source Charge Qgs 3.5 6 Gate-Drain Charge Qgd 4.7 8 Turn-On Delay Time tD(on) 9.7 15 nS VGS = -10V, VDD = -15V, RGEN = 6Ω, ID = -7A Turn-On Rise Time tr 17.1 26 Turn-Off Delay Time tD(off) 60.5 91 Turn-Off Fall Time tf 40.4 61 Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. |
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