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DMP3010LPSQ Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP3010LPSQ Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page POWERDI is a registered trademark of Diodes Incorporated. DMP3010LPSQ Document number: DS36683 Rev. 4 - 2 2 of 7 www.diodes.com February 2015 © Diodes Incorporated DMP3010LPSQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 7) VGS = 10V Steady State TA = +25°C TA = +70°C ID -36 -29 A Continuous Drain Current (Note 7) VGS = 4.5V Steady State TA = +25°C TA = +70°C ID -31 -25 A Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID -14.5 -11.5 A Pulsed Drain Current (Notes 6 & 9) IDM -100 A Avalanche Current (Notes 10 & 11) IAR -17.5 A Repetitive Avalanche Energy (Notes 10 & 11) L = 1mH EAR 153 mJ Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 6) PD 2.18 W Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) RθJA 55 °C/W Power Dissipation (Note 7) PD 14.37 W Thermal Resistance, Junction to Ambient @TA = +25°C (Note 7) RθJA 8.7 °C/W Power Dissipation (Notes 7 & 8) PD 58.7 W Thermal Resistance, Junction to Case @TC = +25°C (Notes 7 & 8) RθJC 2.13 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 11) Drain-Source Breakdown Voltage BVDSS -30 — — V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS — — -1 µ A VDS = -30V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 11) Gate Threshold Voltage VGS(th) -1.1 -1.6 -2.1 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS(ON) — 5.7 7.5 m VGS = -10V, ID = -10A — 7.2 10 VGS = -4.5V, ID = -10A Forward Transfer Admittance |Yfs| — 30 — S VDS = -15V, ID = -10A Diode Forward Voltage VSD — -0.65 -1 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 12) Input Capacitance Ciss — 6,234 — pF VDS = 15V, VGS = 0V, f = 1MHz Output Capacitance Coss — 1,500 — pF Reverse Transfer Capacitance Crss — 774 — pF Gate Resistance Rg — 1.28 — VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -10V) Qg — 126.2 — nC VDS = -15V, ID = -10A Total Gate Charge (VGS = -4.5V) Qg — 59.2 — nC VDS = -15V, VGS = -4.5V, ID = -10A Gate-Source Charge Qgs — 16.1 — nC Gate-Drain Charge Qgd — 15.7 — nC Turn-On Delay Time tD(on) — 11.4 — ns VDS = -15V, VGEN = -10V, RG = 6 , ID = -1A Turn-On Rise Time tr — 9.4 — ns Turn-Off Delay Time tD(off) — 260.7 — ns Turn-Off Fall Time tf — 99.3 — ns Notes: 6. Device mounted on FR-4 PCB with 1-inch square 2 oz. Copper, single sided. 7. Device mounted on FR-4 PCB with infinite heatsink. 8. RθJC is guaranteed by design while RθCA is determined by the user’s board design. 9. Repetitive rating, pulse width limited by junction temperature, 10µs pulse, duty cycle = 1%. 10. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C. 11. Short duration pulse test used to minimize self-heating effect. 12. Guaranteed by design. Not subject to production testing. |
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