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DMP3010LPSQ Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMP3010LPSQ
Description  P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMP3010LPSQ Datasheet(HTML) 2 Page - Diodes Incorporated

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POWERDI is a registered trademark of Diodes Incorporated.
DMP3010LPSQ
Document number: DS36683 Rev. 4 - 2
2 of 7
www.diodes.com
February 2015
© Diodes Incorporated
DMP3010LPSQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 7) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
-36
-29
A
Continuous Drain Current (Note 7) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
-31
-25
A
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
-14.5
-11.5
A
Pulsed Drain Current (Notes 6 & 9)
IDM
-100
A
Avalanche Current (Notes 10 & 11)
IAR
-17.5
A
Repetitive Avalanche Energy (Notes 10 & 11) L = 1mH
EAR
153
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6)
PD
2.18
W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
RθJA
55
°C/W
Power Dissipation (Note 7)
PD
14.37
W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 7)
RθJA
8.7
°C/W
Power Dissipation (Notes 7 & 8)
PD
58.7
W
Thermal Resistance, Junction to Case @TC = +25°C (Notes 7 & 8)
RθJC
2.13
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 11)
Drain-Source Breakdown Voltage
BVDSS
-30
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
-1
µ
A
VDS = -30V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 11)
Gate Threshold Voltage
VGS(th)
-1.1
-1.6
-2.1
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS(ON)
5.7
7.5
m
VGS = -10V, ID = -10A
7.2
10
VGS = -4.5V, ID = -10A
Forward Transfer Admittance
|Yfs|
30
S
VDS = -15V, ID = -10A
Diode Forward Voltage
VSD
-0.65
-1
V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
Ciss
6,234
pF
VDS = 15V, VGS = 0V,
f = 1MHz
Output Capacitance
Coss
1,500
pF
Reverse Transfer Capacitance
Crss
774
pF
Gate Resistance
Rg
1.28
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -10V)
Qg
126.2
nC
VDS = -15V, ID = -10A
Total Gate Charge (VGS = -4.5V)
Qg
59.2
nC
VDS = -15V, VGS = -4.5V,
ID = -10A
Gate-Source Charge
Qgs
16.1
nC
Gate-Drain Charge
Qgd
15.7
nC
Turn-On Delay Time
tD(on)
11.4
ns
VDS = -15V, VGEN = -10V,
RG = 6 , ID = -1A
Turn-On Rise Time
tr
9.4
ns
Turn-Off Delay Time
tD(off)
260.7
ns
Turn-Off Fall Time
tf
99.3
ns
Notes:
6. Device mounted on FR-4 PCB with 1-inch square 2 oz. Copper, single sided.
7. Device mounted on FR-4 PCB with infinite heatsink.
8. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
9. Repetitive rating, pulse width limited by junction temperature, 10µs pulse, duty cycle = 1%.
10. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.
11. Short duration pulse test used to minimize self-heating effect.
12. Guaranteed by design. Not subject to production testing.


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