Voltage Variable Absorptive

Attenuator, 1700 - 2000 MHz

SOW-16

V 5.00

Features

n

Input IP3: +31 dBm Min (Full Attenuation Range)

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Input IP3 is 15 -20 dB Better than GaAs

n

Linear Operation: +20 dBm Min.

n

Plastic SOIC, Wide Body, SMT Package

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35 dB Dynamic Range (With 30 mA Bias Current)

n

Single Control Voltage

n

50 ohm Impedance

n

Linear Driver, DR65-0002, Available

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Test Boards are Available

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Tape and Reel Packaging Available

Description

M/A-COM's AT10-0017 is a PIN diode based voltage

variable attenuator. This device is in a SOIC-16, wide body

plastic surface mount package. These attenuators have

linear operating power and input intercept point levels 15 -

20 dB better than GaAs FET MMIC voltage variable

attenuators.

They are ideally suited for use where low

distortion, high linear operating power and high dynamic

range are required.

These devices are optimized for the

PCS frequency band, but exhibit excellent performance and

repeatability over the entire specified frequency band. The

AT10-0017 is ideally suited for wireless communications

systems.

Package outline conforms to JEDEC standard MS-013AA.

Parameter

Test Conditions

Frequency

Units

Min

Typical

Max

Insertion Loss

0 volts

1700-2000 MHz

1930 - 1990 MHz

dB

dB

—

—

—

2.5

3.5

3.0

Attenuation

(Above Loss)

10 mA bias current

1700-2000 MHz

1930 - 1990 MHz

dB

dB

28

30

—

35

—

—

Frequency

Flatness

0 to 30 dB attenuation

1700-2000 MHz

1930 - 1990 MHz

dB

dB

—

—

1.5

0.4

2.0

0.6

VSWR

0 to 30 dB attenuation

1700-2000 MHz

1930 - 1990 MHz

Ratio

Ratio

——-

1.6:1

1.5:1

1.8:1

1.7:1

Switching Speed

50% Control to 90%/10% RF

1700-2000 MHz

µs

—

—

3.0

Linear Operation

—

1700-2000 MHz

dBm

—

+20

—

Two-tone inputs up to +10 dBm

1700-2000 MHz

dBm

+31

—-

—

—

1700-2000 MHz

mA

—

—-

30