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CZT5551HC_15 Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part No. CZT5551HC_15
Description  SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR
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Maker  CENTRAL [Central Semiconductor Corp]
Homepage  http://www.centralsemi.com
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CZT5551HC
SURFACE MOUNT
HIGH CURRENT
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5551HC type
is a high current NPN silicon transistor manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for high voltage and
high current amplifier applications.
MARKING: FULL PART NUMBER
SOT-223 CASE
SOT-223 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6.0
V
Continuous Collector Current
IC
1.0
A
Power Dissipation
PD
2.0
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
62.5
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=120V
50
nA
ICBO
VCB=120V, TA=100°C
50
µA
IEBO
VEB=4.0V
50
nA
BVCBO
IC=100µA
180
V
BVCEO
IC=1.0mA
160
V
BVEBO
IE=10µA
6.0
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.15
V
VCE(SAT)
IC=50mA, IB=5.0mA
0.20
V
VBE(SAT)
IC=10mA, IB=1.0mA
1.00
V
VBE(SAT)
IC=50mA, IB=5.0mA
1.00
V
hFE
VCE=5.0V, IC=1.0mA
80
hFE
VCE=5.0V, IC=10mA
80
250
hFE
VCE=5.0V, IC=50mA
30
hFE
VCE=10V, IC=1.0A
10
fT
VCE=10V, IC=10mA, f=100MHz
100
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
15
pF
R1 (1-March 2010)
www.centra lsemi.com




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