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CZT5551_15 Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part No. CZT5551_15
Description  SURFACE MOUNT SILICON NPN TRANSISTOR
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Maker  CENTRAL [Central Semiconductor Corp]
Homepage  http://www.centralsemi.com
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CZT5551
SURFACE MOUNT SILICON
NPN TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5551 is a
silicon NPN transistor manufactured by the epitaxial
planar process, epoxy molded in a surface mount
package, designed for high voltage amplifier
applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6.0
V
Continuous Collector Current
IC
600
mA
Power Dissipation
PD
2.0
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
62.5
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=120V
50
nA
ICBO
VCB=120V, TA=100°C
50
μA
IEBO
VEB=4.0V
50
nA
BVCBO
IC=100μA
180
V
BVCEO
IC=1.0mA
160
V
BVEBO
IE=10μA
6.0
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.15
V
VCE(SAT)
IC=50mA, IB=5.0mA
0.20
V
VBE(SAT)
IC=10mA, IB=1.0mA
1.00
V
VBE(SAT)
IC=50mA, IB=5.0mA
1.00
V
hFE
VCE=5.0V, IC=1.0mA
80
hFE
VCE=5.0V, IC=10mA
80
250
hFE
VCE=5.0V, IC=50mA
30
fT
VCE=10V, IC=10mA, f=100MHz
100
300
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
6.0
pF
Cib
VEB=0.5V, IC=0, f=1.0MHz
20
pF
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
200
NF
VCE=5.0V, IC=200μA, RS=10Ω,
f=10Hz to 15.7kHz
8.0
dB
SOT-223 CASE
SOT-223 CASE
R5 (11-June 2013)
www.centr a lsemi.com




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