CMXT2222A

SURFACE MOUNT

DUAL NPN

SILICON TRANSISTORS

ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

hre

VCE=10V, IC=1.0mA, f=1.0kHz

8.0

hre

VCE=10V, IC=10mA, f=1.0kHz

4.0

hfe

VCE=10V, IC=1.0mA, f=1.0kHz

50

300

hfe

VCE=10V, IC=10mA, f=1.0kHz

75

375

hoe

VCE=10V, IC=1.0mA, f=1.0kHz

5.0

35

μS

hoe

VCE=10V, IC=10mA, f=1.0kHz

25

200

μS

rb’Cc

VCB=10V, IE=20mA, f=31.8MHz

150

ps

NF

VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz

4.0

dB

td

VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA

10

ns

tr

VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA

25

ns

ts

VCC=30V, IC=150mA, IB1=IB2=15mA

225

ns

tf

VCC=30V, IC=150mA, IB1=IB2=15mA

60

ns

SOT-26 CASE - MECHANICAL OUTLINE

LEAD CODE:

1) Emitter Q1

2) Base Q1

3) Collector Q2

4) Emitter Q2

5) Base Q2

6) Collector Q1

MARKING CODE: X1P

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R3 (12-February 2010)