CMST5086_15 datasheet(1/2 Pages) CENTRAL

Part #	CMST5086

Description	SURFACE MOUNT PNP SILICON TRANSISTOR

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Manufacturer	CENTRAL [Central Semiconductor Corp]

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CMST5086

CMST5087

SURFACE MOUNT

PNP SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMST5086,

CMST5087 types are PNP silicon transistors

manufactured by the epitaxial planar process, epoxy

molded in a SUPERmini™ surface mount package,

designed for applications requiring high gain and low

noise.

MARKING CODES: CMST5086: 2PC

CMST5087: 2QC

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

3.0

V

Continuous Collector Current

IC

50

mA

Power Dissipation

PD

275

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

455

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

CMST5086

CMST5087

SYMBOL

TEST CONDITIONS

MIN MAX

UNITS

ICBO

VCB=10V

-

10

-

10

nA

ICBO

VCB=35V

-

50

-

50

nA

BVCBO

IC=100μA

50

-

50

-

V

BVCEO

IC=1.0mA

50

-

50

-

V

BVEBO

IE=100μA

3.0

-

3.0

-

V

VCE(SAT)

IC=10mA, IB=1.0mA

-

0.30

-

0.30

V

VBE(SAT)

IC=10mA, IB=1.0mA

-

0.85

-

0.85

V

hFE

VCE=5.0V, IC=0.1mA

150

500

250

800

hFE

VCE=5.0V, IC=1.0mA

150

-

250

-

hFE

VCE=5.0V, IC=10mA

150

-

250

-

fT

VCE=5.0V, IC=500μA, f=20MHz

40

-

40

-

MHz

Cob

VCB=5.0V, IE=0, f=1.0MHz

-

4.0

-

4.0

pF

hfe

VCE=5.0V, IC=1.0mA, f=1.0kHz

150

600

250

900

NF

VCE=5.0V, IC=20mA, RS=10kΩ

f=10Hz to 15.7kHz

-

3.0

-

2.0

dB

NF

VCE=5.0V, IC=100μA, RS=3.0kΩ

f=1.0kHz

-

3.0

-

2.0

dB

SOT-323 CASE

R3 (9-February 2010)

www.centra lsemi.com

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