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DMP2018LFK Datasheet(PDF) 3 Page - Diodes Incorporated

Part No. DMP2018LFK
Description  P-CHANNEL ENHANCEMENT MODE MOSFET
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Maker  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
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DMP2018LFK Datasheet(HTML) 3 Page - Diodes Incorporated

   
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DMP2018LFK
Document number: DS35357 Rev. 5 - 2
3 of 7
www.diodes.com
March 2012
© Diodes Incorporated
DMP2018LFK
Electrical Characteristics @ TA = 25°C unless otherwise stated
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
-20
-
-
V
VGS = 0V, ID = -10mA
Zero Gate Voltage Drain Current TJ = 25°C
IDSS
-
-
-1
μA
VDS = -20V, VGS = 0V
Gate-Source Leakage
IGSS
-
-
±2
μA
VGS = ±10V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
-0.45
-
-1.2
V
VDS = -10V, ID = -200μA
Static Drain-Source On-Resistance
RDS (ON)
-
10
16
VGS = -4.5V, ID = -3.6A
-
12
20
VGS = -2.5V, ID = -3.6A
-
13.6
25
VGS = -2.0V, ID = -1.8A
-
20
-
VGS = -1.5V, ID = -1A
Forward Transfer Admittance
|Yfs|
10
17
-
S
VDS = -10V, ID = -3.6A
Diode Forward Voltage
VSD
-
0.7
1.2
V
VGS = 0V, IS = -3.6A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
-
4748
-
pF
VDS = -10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
-
833
-
Reverse Transfer Capacitance
Crss
-
339
-
Gate Resistance
Rg
-
6.2
-
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -10V)
Qg
-
113
-
nC
VDS = -16V, ID = -7.2A
Total Gate Charge (VGS = -4.5V)
Qg
-
53
-
Gate-Source Charge
Qgs
-
7.1
-
Gate-Drain Charge
Qgd
-
8.5
-
Turn-On Delay Time
tD(on)
-
22.8
-
ns
VDD = -10V, VGS = -4.5V,
RG = 4.7Ω, ID = -3.6A
Turn-On Rise Time
tr
-
29.8
-
Turn-Off Delay Time
tD(off)
-
240.8
-
Turn-Off Fall Time
tf
-
100.6
-
Notes:
6. UIS in production with L = 0.5mH, TJ = 25°C
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
0
0.511.5
2
Fig. 1 Typical Output Characteristic
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
0
5
10
15
20
25
30
V
= -1.5V
GS
V
= -2.0V
GS
V
= -2.5V
GS
V
= -4.5V
GS
V
= -10V
GS
0
0.5
1
1.5
2
2.5
3
Fig. 2 Typical Transfer Characteristic
-V
, GATE-SOURCE VOLTAGE (V)
GS
0
5
10
15
20
25
30
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= -5V
DS


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