DMP1046UFDB

Document number: DS37712 Rev. 2 - 2

2 of 6

www.diodes.com

February 2015

© Diodes Incorporated

DMP1046UFDB

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-12

V

Gate-Source Voltage

±8

V

Steady

State

-3.8

-3.0

A

t < 5s

-5.0

-4.0

A

Maximum Continuous Body Diode Forward Current (Note 5)

-1

A

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

-15

A

Avalanche Current (L = 0.1mH)

-12

A

Avalanche Energy (L = 0.1mH)

8

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

Steady State

1.4

W

t < 5s

2.2

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

92

°C/W

t < 5s

55

Thermal Resistance, Junction to Case (Note 5)

20

Operating and Storage Temperature Range

-55 to 150

°C

Notes:

5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

-12

-

-

V

-

-

-1.0

µ

A

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

-0.4

-

-1

V

Static Drain-Source On-Resistance

-

37

61

m

-

47

81

-

63

115

Diode Forward Voltage

-

-0.65

-1.2

V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

-

915

-

pF

f = 1.0MHz

Output Capacitance

-

225

-

pF

Reverse Transfer Capacitance

-

183

-

pF

Gate Resistance

-

56.9

-

-

10.7

-

nC

17.9

nC

Gate-Source Charge

-

1.7

-

nC

Gate-Drain Charge

-

3.0

-

nC

Turn-On Delay Time

-

5.7

-

ns

Turn-On Rise Time

-

11.5

-

ns

Turn-Off Delay Time

-

27.8

-

ns

Turn-Off Fall Time

-

26.4

-

ns

Notes:

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.