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DMP1046UFDB Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP1046UFDB Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page DMP1046UFDB Document number: DS37712 Rev. 2 - 2 2 of 6 www.diodes.com February 2015 © Diodes Incorporated DMP1046UFDB Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -12 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = +25°C TA = +70°C ID -3.8 -3.0 A t < 5s TA = +25°C TA = +70°C ID -5.0 -4.0 A Maximum Continuous Body Diode Forward Current (Note 5) IS -1 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM -15 A Avalanche Current (L = 0.1mH) IAS -12 A Avalanche Energy (L = 0.1mH) EAS 8 mJ Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) Steady State PD 1.4 W t < 5s 2.2 Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 92 °C/W t < 5s 55 Thermal Resistance, Junction to Case (Note 5) RθJC 20 Operating and Storage Temperature Range TJ, TSTG -55 to 150 °C Notes: 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS -12 - - V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current TJ = +25°C IDSS - - -1.0 µ A VDS = -12V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) -0.4 - -1 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS (ON) - 37 61 m VGS = -4.5V, ID = -3.6A - 47 81 VGS = -2.5V, ID = -3.2A - 63 115 VGS = -1.8V, ID = -1.0A Diode Forward Voltage VSD - -0.65 -1.2 V VGS = 0V, IS = -4.5A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss - 915 - pF VDS = -6V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 225 - pF Reverse Transfer Capacitance Crss - 183 - pF Gate Resistance Rg - 56.9 - VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg - 10.7 - nC VDS = -6V, ID = -4.3A Total Gate Charge (VGS = -8V) 17.9 nC Gate-Source Charge Qgs - 1.7 - nC Gate-Drain Charge Qgd - 3.0 - nC Turn-On Delay Time tD(on) - 5.7 - ns VDD = -6V, VGS = -4.5V, RL = 1.6 , RG = 1 Turn-On Rise Time tr - 11.5 - ns Turn-Off Delay Time tD(off) - 27.8 - ns Turn-Off Fall Time tf - 26.4 - ns Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. |
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Similar Description - DMP1046UFDB_15 |
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