DMP1022UFDF

2 of 6

www.diodes.com

May 2015

© Diodes Incorporated

DMP1022UFDF

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-12

V

Gate-Source Voltage

±8

V

Steady

State

-9.5

-7.6

A

t<5s

-11.0

-8.8

A

Pulsed Drain Current (10

μs pulse, duty cycle = 1%)

-90

A

Continuous Source-Drain Diode Current

-2.5

-7.1

A

Pulsed Source-Drain Diode Current (

10μs pulse, duty cycle = 1%)

-50

A

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

0.73

W

0.47

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

172

°C/W

t<5s

128

Total Power Dissipation (Note 6)

2.1

W

1.3

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

59

°C/W

t<5s

45

Thermal Resistance, Junction to Case (Note 6)

Steady state

5.1

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

-12

—

—

V

—

—

-1

µA

Gate-Source Leakage

—

—

±10

µA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-0.35

—

-0.8

V

Static Drain-Source On-Resistance

—

12

14.8

m

Ω

15

19

20

26

23

32

Diode Forward Voltage

—

-0.8

-1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

2,712

—

pF

f = 1.0MHz

Output Capacitance

—

514

—

Reverse Transfer Capacitance

—

467

—

Gate Resistance

—

8.6

18

Ω

Total Gate Charge

—

48.3

—

nC

Total Gate Charge

—

28.6

—

Gate-Source Charge

—

4.2

—

Gate-Drain Charge

—

7.0

—

Turn-On Delay Time

—

25.1

—

ns

Turn-On Rise Time

—

39.8

—

Turn-Off Delay Time

—

141

—

Turn-Off Fall Time

—

147

—

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.