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HFS12N65U Datasheet(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFS12N65U Datasheet(HTML) 3 Page - SemiHow Co.,Ltd. |
3 / 7 page Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 10 0 10 1 10 0 10 1 10 2 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V * Notes : 1. 300us Pulse Test 2. T C = 25 oC V DS, Drain-Source Voltage [V] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd * Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 2468 10 0.1 1 10 -55 oC 25 oC * Notes : 1. V DS= 30V 2. 300us Pulse Test V GS, Gate-Source Voltage [V] 150 oC 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 25 oC * Notes : 1. V GS= 0V 2. 300us Pulse Test V SD, Source-Drain Voltage [V] 150 oC 0 4 8 1216 2024 28 0.4 0.6 0.8 1.0 1.2 V GS = 20V V GS = 10V Note : T J = 25 oC I D, Drain Current [A] 0 1020 3040 50 0 2 4 6 8 10 12 V DS = 325V V DS = 130V V DS = 520V Note : I D = 12A Q G, Total Gate Charge [nC] |
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