HFS12N65U datasheet(3/7 Pages) SEMIHOW

Part #	HFS12N65U

Description	Superior Avalanche Rugged Technology

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Typical Characteristics

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

10

0

10

1

10

0

10

1

10

2

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

* Notes :

1. 300us Pulse Test

2. T

C = 25

oC

V

DS, Drain-Source Voltage [V]

10

-1

10

0

10

1

0

500

1000

1500

2000

2500

3000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

2468

10

0.1

1

10

-55

oC

25

oC

* Notes :

1. V

DS= 30V

2. 300us Pulse Test

V

GS, Gate-Source Voltage [V]

150

oC

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.1

1

10

25

oC

* Notes :

1. V

GS= 0V

2. 300us Pulse Test

V

SD, Source-Drain Voltage [V]

150

oC

0

4

8

1216

2024

28

0.4

0.6

0.8

1.0

1.2

V

GS = 20V

V

GS = 10V

Note : T

J = 25

oC

I

D, Drain Current [A]

0

1020

3040

50

0

2

4

6

8

10

12

V

DS = 325V

V

DS = 130V

V

DS = 520V

Note : I

D = 12A

Q

G, Total Gate Charge [nC]

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