CMPT992E datasheet(1/2 Pages) CENTRAL

Part #	CMPT992E

Description	SURFACE MOUNT PNP LOW NOISE SILICON TRANSISTOR

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Manufacturer	CENTRAL [Central Semiconductor Corp]

Direct Link	http://www.centralsemi.com

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CMPT992

CMPT992P

CMPT992F

CMPT992E

SURFACE MOUNT PNP LOW NOISE

SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT992 types

are PNP silicon low noise transistors manufactured by

the epitaxial planar process, epoxy molded in a surface

mount package, designed for low noise amplifier

applications where a high BVCEO is required.

MARKING CODE: SEE MARKING CODE TABLE ON

FOLLOWING PAGE.

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

110

V

Collector-Emitter Voltage

VCEO

110

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

50

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IEBO

VEB=5.0V

30

nA

BVCBO

IC=100μA

110

V

BVCEO

IC=1.0mA

110

V

BVEBO

IE=10μA

5.0

V

VCE(SAT)

IC=10mA, IB=1.0mA

0.30

V

VBE(ON)

VCE=6.0V, IC=1.0mA

0.55

0.65

V

fT

VCE=6.0V, IC=1.0mA

50

MHz

Cob

VCB=30V, IE=0, f=1.0MHz

3.0

pF

NF

VCE=5.0V, IC=100μA, RS=10kΩ,

f=10Hz to 15.7KHz

3.0

dB

CMPT992

CMPT992P

CMPT992F

CMPT992E

MIN

MAX

MIN

MAX

MIN

MAX

MIN

MAX

hFE

VCE=6.0V, IC=100μA

150

-

150

-

150

-

150

-

hFE

VCE=6.0V, IC=1.0mA

200

800

200

400

300

600

400

800

SOT-23 CASE

R2 (1-February 2010)

www.centra lsemi.com

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