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SMB1N-850D Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH

Part # SMB1N-850D
Description  infrared high power led
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Manufacturer  ROITHNER [Roithner LaserTechnik GmbH]
Direct Link  http://www.roithner-laser.com
Logo ROITHNER - Roithner LaserTechnik GmbH

SMB1N-850D Datasheet(HTML) 1 Page - Roithner LaserTechnik GmbH

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1
SMB1N-850D
v 1.0 17.03.2014
Description
SMB1N-850D is a surface mount AlGaAs High Power LED with a typical peak wavelength of
850 nm and radiation of 650 mW. It comes in SMD package (PA9T) with silver plated soldering pads
(lead free solderable), copper heat sink, and molded with silicone resin.
Maximum Ratings (T
CASE=25°C)
Parameter
Symbol
Values
Min.
Max.
Unit
Power Dissipation
PD
2500
mW
Forward Current
IF
1000
mA
Pulse Forward Current *
1
IFP
3000
mA
Reverse Voltage
VF
5
V
Thermal Resistance
RTHJA
10
K/W
Junction Temperature
TJ
120
°C
Operating Temperature
TCASE
- 40
+ 100
°C
Storage Temperature
TSTG
- 40
+ 100
°C
Lead Solder Temperature *
2
TSLD
+ 250
°C
*
1 duty=1%, pulse width = 10 µs
*
2 must be completed within 5 seconds
Electro-Optical Characteristics (T
CASE=25°C)
*
1 measured by S3584-08
*
2 measured by CIE127-2007 Condition B
Parameter
Symbol Conditions
Values
Min.
Typ.
Max.
Unit
Peak Wavelength
λP
IF=1000mA
840
850
nm
Half Width
∆λ
IF=1000mA
37
nm
Forward Voltage
VF
IF=350mA
1.5
1.9
V
VF
IF=1000mA
2.1
2.5
VFP
IFP=3A
2.5
Radiated Power *
1
PO
IF=1000mA
450
650
mW
IFP=3A
1800
Radiant Intensity *
2
IE
IF=1000mA
210
mW/sr
IFP=3A
600
Viewing Angle
φ
IF=100mA
124
deg.
Rise Time
tR
IF=1000mA
50
ns
Fall Time
tF
IF=1000mA
50
ns


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