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DMN4010LK3

Document number: DS36743 Rev. 2 - 2

4 of 6

www.diodes.com

February 2014

© Diodes Incorporated

DMN4010LK3

0

0.005

0.01

0.015

0.02

0.025

0.03

-50

-25

0

25

50

75

100

125 150

T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

J

°

V

= 4.5V

I = 11A

GS

D

V=

V

I = 14A

GS

D

10

0.8

1.1

1.4

1.7

2

2.3

-50-25

0

25

50

75100

125

150

T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

J

°

I= 1mA

D

I = 250µA

D

0

5

10

15

20

25

30

0

0.3

0.6

0.9

1.2

1.5

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

10

100

1000

10000

0

5

10

15

20

25

30

35

40

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

f = 1MHz

0

2

4

6

8

10

0

5

10

15

20

25

30

35

40

Q(nC)

Figure 11 Gate Charge

V

= 20V

I=

A

DS

D

14

0.01

0.1

1

10

100

1000

0.1

1

10

100

-V , DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

DS

R

Limited

DS(on)

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

T

= 150°C

T = 25°C

J(max)

A

V

= 10V

Single Pulse

GS

DUT on 1 * MRP Board