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DMN3730UFB4-7 Datasheet(PDF) 3 Page - Diodes Incorporated |
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DMN3730UFB4-7 Datasheet(HTML) 3 Page - Diodes Incorporated |
3 / 7 page DMN3730UFB4 Document number: DS35017 Rev. 8 - 2 3 of 7 www.diodes.com May 2015 © Diodes Incorporated DMN3730UFB4 A Product Line of Diodes Incorporated Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 10μA Zero Gate Voltage Drain Current IDSS — — 1 µA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS — — 3 µA VGS = ±8V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 0.45 — 0.95 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance (Note 8) RDS(on) — — — — — — 460 mΩ VGS = 4.5V, ID = 200mA 560 VGS = 2.5V, ID = 100mA 730 VGS = 1.8V, ID = 75mA Forward Transfer Admittance |Yfs| 40 — — mS VDS = 3V, ID = 10mA Diode Forward Voltage (Note 8) VSD — 0.7 1.2 V VGS = 0V, IS = 300mA DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 64.3 — pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 6.1 — pF Reverse Transfer Capacitance Crss — 4.5 — pF Gate Resistance Rg — 70 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg — 1.6 — nC VGS = 4.5V, VDS = 15V, ID = 1A Gate-Source Charge Qgs — 0.2 — nC Gate-Drain Charge Qgd — 0.2 — nC Turn-On Delay Time tD(on) — 3.5 — ns VDS = 10V, ID = 1A VGS = 10V, RG = 6Ω Turn-On Rise Time tr — 2.8 — ns Turn-Off Delay Time tD(off) — 38 — ns Turn-Off Fall Time tf — 13 — ns Notes: 8. Measured under pulsed conditions to minimize self-heating effect. Pulse width 300µs; duty cycle 2% 9. For design aid only, not subject to production testing. 0 1 2 3 4 5 Fig. 1 Typical Output Characteristic V , DRAIN-SOURCE VOLTAGE (V) DS 0 0.5 1.0 1.5 2.0 V = 1.5V GS V = 2.0V GS V = 2.5V GS V = 3.0V GS V = 4.5V GS V = 10V GS 0 0.5 1.0 1.5 2.0 0 0.5 1 1.5 2 2.5 3 Fig. 2 Typical Transfer Characteristic V , GATE-SOURCE VOLTAGE (V) GS T = -55°C A T = 25°C A T = 85°C A T = 125°C A T = 150°C A V = 5V DS |
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