DMN3042L

Document number: DS37539 Rev. 2- 2

2 of 6

www.diodes.com

January 2015

© Diodes Incorporated

DMN3042L

Characteristic

Symbol

Value

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±12

V

Steady

State

5.8

4.0

A

Maximum Body Diode Forward Current (Note 6)

1.5

A

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

30

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

0.72

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

171

°C/W

Power Dissipation (Note 6)

1.4

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

93

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

30





V

Zero Gate Voltage Drain Current





1

µA

Gate-Source Leakage





±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.6



1.4

V

Static Drain-Source On-Resistance



21

26.5

m



23

32



29

48

Diode Forward Voltage



0.7

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance



570

860

pF

f = 1.0MHz

Output Capacitance



63

95

Reverse Transfer Capacitance



53

80

Gate Resistance



3.2

4.5



13.3

20

nC



6.1

8

Gate-Source Charge



1.0

1.5

Gate-Drain Charge



1.6

2.5

Turn-On Delay Time



1.5

2.4

nS

Turn-On Rise Time



3.3

5

Turn-Off Delay Time



13.9

22

Turn-Off Fall Time



4.9

7

Body Diode Reverse Recovery Time



7.8

12

nS

Body Diode Reverse Recovery Charge



1.9

3

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.