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DMN3030LFG Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN3030LFG Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page  DMN3030LFG Document number: DS35499 Rev. 5 - 2 2 of 6 www.diodes.com March 2013 © Diodes Incorporated POWERDI is a registered trademark of Diodes Incorporated. DMN3030LFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25°C TA = +70°C ID 5.3 4.2 A t<10s TA = +25°C TA = +70°C ID 6.8 5.2 A Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 8.6 6.8 A t<10s TA = +25°C TA = +70°C ID 11 8.8 A Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM 70 A Maximum Body Diode continuous Current IS 3 A Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 0.9 W TA = +70°C 0.5 Thermal Resistance, Junction to Ambient (Note 5) Steady state RJA 148 °C/W t<10s 89 Total Power Dissipation (Note 6) TA = +25°C PD 2.3 W TA = +70°C 1.4 Thermal Resistance, Junction to Ambient (Note 6) Steady state RJA 56 °C/W t<10s 34 Thermal Resistance, Junction to Case (Note 6) RJC 6.9 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 100 nA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS — — ±1 µA VGS = ±25V, VDS = 0V — — 100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 0.8 1.2 2.1 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) — 10 18 mΩ VGS = 10V, ID = 10A — 16 27 VGS = 4.5V, ID = 7.5A Forward Transfer Admittance |Yfs| — 6 — S VDS = 5V, ID = 10A Diode Forward Voltage VSD — 0.7 1.0 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 751 — pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 121 — Reverse Transfer Capacitance Crss — 110 — Gate Resistance Rg — 1.5 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge VGS = 4.5V Qg — 9 — nC VGS = 4.5V, VDS = 15V, ID =6A Total Gate Charge VGS = 10V Qg — 17.4 — VGS = 10V, VDS = 15V, ID = 6A Gate-Source Charge Qgs — 2.2 — Gate-Drain Charge Qgd — 3 — Turn-On Delay Time tD(on) — 2.5 — ns VDD = 15V, VGS = 10V, RG = 6Ω, RL = 1.8Ω, ID = 6.7A Turn-On Rise Time tr — 6.6 — Turn-Off Delay Time tD(off) — 19.0 — Turn-Off Fall Time tf — 6.3 — Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. |
Similar Part No. - DMN3030LFG_15 |
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