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SMAL850 Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH

Part # SMAL850
Description  High Power LED Array
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Manufacturer  ROITHNER [Roithner LaserTechnik GmbH]
Direct Link  http://www.roithner-laser.com
Logo ROITHNER - Roithner LaserTechnik GmbH

SMAL850 Datasheet(HTML) 1 Page - Roithner LaserTechnik GmbH

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15.02.2012
SMAL850
1 of 3
SMAL850
TECHNICAL DATA
High Power LED Array, 60 chips, SMD
ALGaAs
SMAL850 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high
efficiency AlGaAs diode chips, mounted on an AIN ceramics and covered with clear silicone resin.
These devices are designed for high current operation with proper heat sinking to improver thermal
conductive efficiency.
Specifications
(Unit: mm)
Structure: AlGaAs, 60 LED chips
Peak Wavelength: typ. 850 nm
Optical Output Power: typ. 1.1 W
Package: PCB, AIN ceramics
Lens: clear epoxy or silicone resin
Absolute Maximum Ratings (Ta=25°C)
Item
Symbol
Value
Unit
Power Dissipation
PD
10
W
Forward Current
IF
1.2
A
Pulse Forward Current*1
IFP
5
A
Junction Temperature
TJ
100
°C
Thermal Resistance *2
RTH
6.3
K/W
Reverse Voltage
VR
50
V
Operating Temperature
Topr
-20 … +80
°C
Storage Temperature
Tstg
-30 … +100
°C
Soldering Temperature *3
Tsol
250
°C
*1 duty = 1%, pulse width = 1 µs
*2 junction – package, mounted on heat sink
*3 must be completed within 3 seconds
Electro-Optical Characteristics
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Forward Voltage
VF
IF = 800 mA
-
7.8
-
V
Reverse Voltage
VR
IR = 10 µA
30
-
-
V
Total Radiated Power *
PO
IF = 800 mA
-
1.1
-
W
IFP = 4 A
-
5.5
-
Radiation Intensity
IE
IF = 800 mA
-
180
-
mW/sr
Peak Wavelength
λP
IF = 800 mA
840
850
860
nm
Half Width
Δλ
IF = 800 mA
-
40
-
nm
Viewing Half Angle
Θ1/2
IF = 800 mA
-
±72
-
deg.
Rise Time
tR
IF = 100 mA
-
15
-
ns
Fall Time
tF
IF = 100 mA
-
10
-
ns
* Total Radiated Power is measured by S3584-08
The above specifications are for reference purpose only and subjected to change without prior notice.


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