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SMAL850 Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH |
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SMAL850 Datasheet(HTML) 1 Page - Roithner LaserTechnik GmbH |
1 / 3 page 15.02.2012 SMAL850 1 of 3 SMAL850 TECHNICAL DATA High Power LED Array, 60 chips, SMD ALGaAs SMAL850 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency AlGaAs diode chips, mounted on an AIN ceramics and covered with clear silicone resin. These devices are designed for high current operation with proper heat sinking to improver thermal conductive efficiency. Specifications (Unit: mm) • Structure: AlGaAs, 60 LED chips • Peak Wavelength: typ. 850 nm • Optical Output Power: typ. 1.1 W • Package: PCB, AIN ceramics • Lens: clear epoxy or silicone resin Absolute Maximum Ratings (Ta=25°C) Item Symbol Value Unit Power Dissipation PD 10 W Forward Current IF 1.2 A Pulse Forward Current*1 IFP 5 A Junction Temperature TJ 100 °C Thermal Resistance *2 RTH 6.3 K/W Reverse Voltage VR 50 V Operating Temperature Topr -20 … +80 °C Storage Temperature Tstg -30 … +100 °C Soldering Temperature *3 Tsol 250 °C *1 duty = 1%, pulse width = 1 µs *2 junction – package, mounted on heat sink *3 must be completed within 3 seconds Electro-Optical Characteristics Item Symbol Condition Min. Typ. Max. Unit Forward Voltage VF IF = 800 mA - 7.8 - V Reverse Voltage VR IR = 10 µA 30 - - V Total Radiated Power * PO IF = 800 mA - 1.1 - W IFP = 4 A - 5.5 - Radiation Intensity IE IF = 800 mA - 180 - mW/sr Peak Wavelength λP IF = 800 mA 840 850 860 nm Half Width Δλ IF = 800 mA - 40 - nm Viewing Half Angle Θ1/2 IF = 800 mA - ±72 - deg. Rise Time tR IF = 100 mA - 15 - ns Fall Time tF IF = 100 mA - 10 - ns * Total Radiated Power is measured by S3584-08 The above specifications are for reference purpose only and subjected to change without prior notice. |
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