DMN65D8LW

Document number: DS35639 Rev. 4 - 2

4 of 5

www.diodes.com

July 2012

© Diodes Incorporated

DMN65D8LW

0.001

0.01

0.1

1

0

0.2

0.4

0.6

0.8

1.0

1.2

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Figure 7 Diode Forward Voltage vs. Current

T= 25°C

A

T = -55°C

A

T= 85°C

A

T = 125°C

A

T = 150°C

A

1

10

100

1,000

01020

30

40

50

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 8 Typical Drain-Source Leakage Current vs. Voltage

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

T = -55°C

A

0

5

10

15

20

25

30

35

40

45

50

0

5

10

15

20

25

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 9 Typical Junction Capacitance

C

oss

f = 1MHz

0

1

2

3

4

5

6

7

8

9

10

0

0.2

0.4

0.6

0.8

1.0

Q

(nC)

Figure 10 Gate Charge

V

= 30V

I=

A

DS

D

150m

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

SOT323

Dim

Min

Max

Typ

A

0.25

0.40

0.30

B

1.15

1.35

1.30

C

2.00

2.20

2.10

D

-

-

0.65

G

1.20

1.40

1.30

H

1.80

2.20

2.15

J

0.0

0.10

0.05

K

0.90

1.00

1.00

L

0.25

0.40

0.30

M

0.10

0.18

0.11

α

0°

8°

-

All Dimensions in mm

A

M

J

L

D

B C

H

K

G