DMN313DLT

Document number: DS35078 Rev. 2 - 2

1 of 5

www.diodes.com

August 2011

© Diodes Incorporated

DMN313DLT

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

30V

2

Ω @ V

270mA

3.2

Ω @ V

210mA

Description and Applications

This new generation MOSFET has been designed to minimize the on-

performance, making it ideal for high efficiency power management

applications.

•

Backlighting

•

DC-DC Converters

•

Power management functions

Features and Benefits

•

Low On-Resistance

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Lead Free By Design/RoHS Compliant (Note 1)

•

ESD Protected up to 2kV

•

"Green" Device (Note 2)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SOT-523

•

Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminals: Finish

⎯ Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

•

Terminal Connections: See Diagram

•

Weight: 0.002 grams (approximate)

Part Number

Case

Packaging

DMN313DLT-7

SOT-523

3000 / Tape & Reel

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year

2010

2011

2012

2013

2014

2015

2016

Code

X

Y

Z

A

B

C

D

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

SOT-523

Top View

Top View

Pin-Out

ESD PROTECTED TO 2kV

G

S

D

Source

Gate

Protection

Diode

Gate

Drain

Equivalent Circuit

NA2

YM

NA2 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: X = 2010)

M = Month (ex: 9 = September)