DMN1019UFDE

3 of 7

www.diodes.com

October 2013

© Diodes Incorporated

DMN1019UFDE

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

12

—

—

V

—

—

1

µA

Gate-Source Leakage

—

—

±2

µA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.35

—

0.8

V

Static Drain-Source On-Resistance

—

7

10

mΩ

8

12

10

14

14

18

28

41

Forward Transfer Admittance

—

28

—

S

Diode Forward Voltage

—

0.8

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

2425

—

pF

f = 1.0MHz

Output Capacitance

—

396

—

Reverse Transfer Capacitance

—

375

—

Gate Resistance

—

1.1

—

Ω

—

50.6

—

nC

—

27.3

—

Gate-Source Charge

—

3.4

—

Gate-Drain Charge

—

5.2

—

Turn-On Delay Time

—

7.6

—

ns

Turn-On Rise Time

—

22.2

—

Turn-Off Delay Time

—

57.6

—

Turn-Off Fall Time

—

16.8

—

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1,000

t1, PULSE DURATION TIME (sec)

Fig. 3 Transient Thermal Resistance

0.001

0.01

0.1

1

R

= r * R

JA(t)

(t)





JA

JA

R

= 178 C/W

Duty Cycle, D = t1/t2



D = 0.5

D = 0.7

D = 0.9

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse