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DMN1029UFDB-13 Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMN1029UFDB-13
Description  N-CHANNEAL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN1029UFDB-13 Datasheet(HTML) 4 Page - Diodes Incorporated

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DMN1029UFDB
Document number: DS37711 Rev. 2 - 2
4 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN1029UFDB
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS=2.5V, ID=3.0A
V
GS=4.5V, ID=5.0A
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D=250μA
I
D=1mA
0
2
4
6
8
10
12
14
16
18
20
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
V
GS=0V
T
A=150℃
V
GS=0V
T
A=125℃
V
GS=0V
T
A=85℃
V
GS=0V, TA=-55℃
V
GS=0V
T
A=25℃
10
100
1000
10000
0
2
4
6
8
10
12
V
DS, DRAIN-SOURCE Voltage (V)
Figure 10. Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss
0
2
4
6
8
0
5
10
15
20
Qg, TOTAL GATE CHARGE (nC)
Figure 11. Gate Charge
V
DS=6V, ID=6.5A
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
T
J(Max)=150℃
T
A=25℃
Single Pulse
DUT on
1*MRP board
V
GS=4.5V
R
DS(ON) Limited
DC
P
W=10s
P
W=1s
P
W=100
ms
P
W=10ms
P
W=100μs
P
W=1ms


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