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DMN2014LHAB-13 Datasheet(PDF) 3 Page - Diodes Incorporated

Part # DMN2014LHAB-13
Description  DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN2014LHAB-13 Datasheet(HTML) 3 Page - Diodes Incorporated

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DMN2014LHAB
Document number: DS36441 Rev. 2 - 2
3 of 6
www.diodes.com
June 2014
© Diodes Incorporated
DMN2014LHAB
10
15
20
25
30
0
0.5
1.0
1.5
2.0
0
5
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DS
V= 1.2V
GS
V= 1.5V
GS
V= 1.8V
GS
V= 2.5V
GS
V
= 3.0V
V
= 3.5V
V
= 4.0V
V
= 4.5V
V
= 10V
GS
GS
GS
GS
GS
10
12
14
16
18
20
0
0.5
1.0
1.5
2.0
0
2
4
6
8
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
V
= 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0.004
0.006
0.008
0.012
0.014
0.016
0.018
0
5
10
15
20
25
30
0.010
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V
= 2.5V
GS
V
= 4.5V
GS
0.005
0.015
0
5
10
15
20
0
0.010
0.020
I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= 4.5V
GS
0.6
0.8
1.0
1.2
1.4
1.8
1.6
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Figure 5 On-Resistance Variation with Temperature
J
°
V= .5V
I= 1A
GS
D
2
V=
V
I= 3A
GS
D
3.6
V=
V
I= 5A
GS
D
4.5
0.004
0.006
0.008
0.012
0.014
0.016
0.018
0.010
0.020
-50 -25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
°
V=
V
I= 1A
GS
D
2.5
V=
V
I= 3A
GS
D
3.6
V
= 4.5V
I= 5A
GS
D


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