DMN63D8LV

Document number: DS36022 Rev. 2 - 2

4 of 6

www.diodes.com

August 2012

© Diodes Incorporated

DMN63D8LV

1.5

2.5

3.5

4.5

1.0

2.0

3.0

4.0

5.0

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

J

°

V

= 4.0V

I = 200mA

GS

D

V=

V

I = 300mA

GS

D

5.0

0.6

0.8

1.2

1.4

1.6

1.8

1.0

2.0

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

J

°

I= 1mA

D

I = 250µA

D

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0

0.3

0.6

0.9

1.2

1.5

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

T= 25°C

A

T = -55°C

A

T= 85°C

A

T = 125°C

A

T = 150°C

A