DMN33D8L

Document number: DS36124 Rev. 2 - 2

1 of 5

www.diodes.com

June 2014

© Diodes Incorporated

DMN33D8L

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

30V

250mA

200mA

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

ideal for high efficiency power management applications.

•

Motor Control

•

Power Management Functions

•

Backlighting

Features and Benefits

•

Low On-Resistance

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

ESD Protected 2KV

•

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

•

Halogen and Antimony Free. “Green” Device (Note 3) 

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SOT23

•

Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminals: Finish

⎯ Matte Tin annealed over Alloy 42

Leadframe. Solderable per MIL-STD-202, Method 208

Weight: 0.008 grams (approximate)

Part Number

Compliance

Case

Packaging

DMN33D8L-7

Standard

SOT23

3000/Tape & Reel

DMN33D8L-13

Standard

SOT23

10000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2014

2015

2016

2017

2018

2019

2020

Code

B

C

D

E

F

G

H

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

SOT23

Top View

ESD protected

Top View

D

G

S

088 = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

Y̅M = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or Y̅ = Year (ex: A = 2013)

M = Month (ex: 9 = September)

Equivalent Circuit

Source

Gate

Protection

Diode

Gate

Drain

Chengdu A/T Site

Shanghai A/T Site

e3